Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-26
2011-04-26
Vu, David (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
Reexamination Certificate
active
07932135
ABSTRACT:
Disclosed is a method of manufacturing a TFT array substrate having a reduced number of mask processes. The method includes sequentially depositing a first conductive material, a gate insulating layer, a semiconductor layer, and a second conductive material on a substrate, and forming a first resist pattern having three height levels on the second conductive material. The method further includes forming a gate line, a data line that crosses the gate line and has first and second slit units, a source electrode connected to the data line and having a third slit unit, and a drain electrode positioned opposite the source electrode with a channel interposed between the source electrode and the drain electrode and having a fourth slit unit, through a plurality of etching processes using the first resist pattern.
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Moon Taehyoung
Nam Seung-hee
Campbell Shaun
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Vu David
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