Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S501000, C257SE25016, C257SE27102
Reexamination Certificate
active
07986015
ABSTRACT:
A semiconductor device includes: a semiconductor substrate having first and second areas; an STI isolation region being made of an isolation trench formed in the semiconductor substrate and an insulating film burying the isolation trench and defining a plurality of active regions in the first and second areas; a first structure formed on an area from the active region in the first area to a nearby STI isolation region and having a first height; and a second structure formed on an area from the active region in the second area to a nearby STI isolation region and having a second height, wherein the surface of the said STI isolation region in the first area is lower than the surface of said STI isolation region in the second area.
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Ema Taiji
Mizutani Kazuhiro
Fujitsu Semiconductor Limited
Kuo W. Wendy
Sandvik Benjamin P
Westerman Hattori Daniels & Adrian LLP
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