Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-02-15

2011-02-15

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S402000, C257SE27061, C438S197000, C438S275000

Reexamination Certificate

active

07888747

ABSTRACT:
A semiconductor device includes a semiconductor substrate; a first impurity diffusion suppression layer and a thicker second impurity diffusion suppression layer formed on the semiconductor substrate in first and second isolated transistor regions; first and second crystal layers formed on the first and second impurity diffusion suppression layers; first and second gate electrodes formed on the first and second crystal layers; first and second p-type channel regions formed in the semiconductor substrate, the first impurity diffusion suppression layer and respective of the first and second crystal layers below the first and second gate electrodes; and first and second source/drain regions formed on both sides of the first and second channel region; wherein the first and second p-type channels have lower impurity concentrations in respective of the first and second crystal layers than in the semiconductor substrate.

REFERENCES:
patent: 6271551 (2001-08-01), Schmitz et al.
patent: 2003/0052348 (2003-03-01), Takagi et al.
patent: 2005/0151202 (2005-07-01), Wieczorek et al.
T. Ernst, et al., “A New Si:C Epitaxial Channel nMOSFET Architecture with Improved Drivability and Short-Channel Characteristics”, Symposium on VLSI Technology Digest of Technical Papers, 2003, pp. 51-52.
Hong-Jyh Li, et al., “The Pile-Ups of Aluminum and Boron in the Sige (c) ”, Materials Research. Society. Symp. Proc. vol. 737, 2003, pp. 643-649.
F. Ducroquet, et al., “Double SiGe:C Diffusion Barrier Channel 40nm CMOS with Improved Short-Channel Performances”, IEPM Technical Digest, 2004, 4 pages.

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