Photoresist topcoat for a photolithographic process

Details Photoresist topcoat for a photolithographic process Photoresist topcoat for a photolithographic process

2011-03-08

2011-03-08

Lee, Sin J. (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S273100, C430S270100, C528S040000, C528S037000, C528S025000, C528S026000, C528S027000, C528S028000, C528S029000, C528S031000, C528S033000

Reexamination Certificate

active

07901868

ABSTRACT:
A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3where m is equal to 8, 10 or 12 and QnMnR1,R2,R3where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

REFERENCES:
patent: 5733714 (1998-03-01), McCulloch et al.
patent: 6632582 (2003-10-01), Kishimura et al.
patent: 6783917 (2004-08-01), Blakeney et al.
patent: 6936663 (2005-08-01), Modisette
patent: 6969577 (2005-11-01), Adegawa
patent: 7041748 (2006-05-01), Lin et al.
patent: 7141692 (2006-11-01), Allen et al.
patent: 7306853 (2007-12-01), Lin et al.
patent: 2002/0090572 (2002-07-01), Sooriyakumaran et al.
patent: 2002/0127416 (2002-09-01), Hacker
patent: 2002/0136910 (2002-09-01), Hacker
patent: 2003/0087172 (2003-05-01), Zhu et al.
patent: 2003/0108812 (2003-06-01), Rottstegge et al.
patent: 2003/0120099 (2003-06-01), Laine et al.
patent: 2004/0033371 (2004-02-01), Hacker
patent: 2004/0121251 (2004-06-01), Yokota et al.
patent: 2004/0137241 (2004-07-01), Lin et al.
patent: 2004/0137362 (2004-07-01), De et al.
patent: 2004/0161698 (2004-08-01), Kanagasabapathy et al.
patent: 2004/0180299 (2004-09-01), Rolland et al.
patent: 2006/0093959 (2006-05-01), Huang et al.
patent: 2006/0105181 (2006-05-01), Lin et al.
patent: 2006/0105273 (2006-05-01), Fukuda et al.
patent: 2006/0110677 (2006-05-01), Houlihan et al.
patent: 2006/0199103 (2006-09-01), Neisser et al.
patent: 2007/0254235 (2007-11-01), Allen et al.
patent: 2007/0254236 (2007-11-01), Allen et al.
patent: 2009/0011377 (2009-01-01), Allen et al.
patent: 2010/0062365 (2010-03-01), Shimada et al.
patent: 2010/0167201 (2010-07-01), Tsubaki
patent: 11-349897 (1999-12-01), None
patent: 2000-313744 (2000-11-01), None
patent: 2001-213963 (2001-08-01), None
patent: 2003-510337 (2003-03-01), None
patent: 2004-196958 (2004-07-01), None
patent: 2004-212983 (2004-07-01), None
patent: 2004-341165 (2004-12-01), None
patent: 2005-015738 (2005-01-01), None
patent: 0110871 (2001-02-01), None
patent: WO2004012012 (2004-02-01), None
patent: 2005007747 (2005-01-01), None
Linda Geppert; Chip Making's Wet New World; IEEE Spectrum May 2004; pp. 30-33.
Office Action (Mail Date Sep. 2, 2010) for U.S. Appl. No. 12/128,129, filed May 28, 2008; Confirmation No. 9747.

Affiliated with

Also associated with

Rating

Photoresist topcoat for a photolithographic process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoresist topcoat for a photolithographic process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresist topcoat for a photolithographic process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2630800