Method of crystallizing silicon

Details Method of crystallizing silicon Method of crystallizing silicon

2011-07-12

2011-07-12

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S487000, C438S795000, C257SE21497

Reexamination Certificate

active

07977217

ABSTRACT:
A method of crystallizing silicon including preparing a substrate having an amorphous silicon film formed thereon, aligning a mask having a first energy region and a second energy region over a first region of the amorphous silicon film formed on the substrate, irradiating a laser beam through the first and second energy regions of the mask onto the first region of the amorphous silicon film, crystallizing the first region of the amorphous silicon film by irradiating the laser beam through the first energy region of the mask, and activating the crystallized first region by irradiating the laser beam through the second energy region.

REFERENCES:
patent: 6770545 (2004-08-01), Yang
patent: 2001/0019863 (2001-09-01), Yang
patent: 2002/0179001 (2002-12-01), Jung
patent: 2002/0179004 (2002-12-01), Jung
patent: 2003/0088848 (2003-05-01), Crowder
patent: 2003/0196589 (2003-10-01), Mitani et al.
patent: 2003-151907 (2003-05-01), None
patent: 2003-309080 (2003-10-01), None
patent: 10-2001-004129 (2001-01-01), None
patent: WO 02/086954 (2002-10-01), None
patent: WO 02086954 (2002-10-01), None
patent: WO 03/043093 (2003-05-01), None

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