Single scan irradiation for crystallization of thin films

Details Single scan irradiation for crystallization of thin films Single scan irradiation for crystallization of thin films

2011-06-21

2011-06-21

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S486000, C438S488000

Reexamination Certificate

active

07964480

ABSTRACT:
A method of processing a polycrystalline film on a substrate includes generating laser pulses, directing the laser pulses through a mask to generate patterned laser beams, each having a length l′, a width w′, and a spacing between adjacent beams d′; irradiating a region of the film with the patterned beams, said beams having an intensity sufficient to melt and to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating the film and/or the mask, in the x- and y-directions. The distance of translation in the y-direction is about l′
-δ, where δ is a value selected to overlap the beamlets from one irradiation step to the next. The distance of translation in the x-direction is selected such that the film is moved a distance of about λ′ after n irradiations, where λ′=w′+d′.

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