Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-19
2011-04-19
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S157000, C257S072000, C257SE51005, C257SE29151
Reexamination Certificate
active
07927930
ABSTRACT:
A method for fabricating an LCD device includes forming an active layer having a source region, a drain region and a channel region on the first substrate; forming first and second conductive layers on the first substrate; forming a gate electrode, a gate line and a pixel electrode by patterning the first and second conductive layers, the gate electrode and the gate line being formed as a dual layer having the first and second conductive layers and the pixel electrode being formed of the first conductive layer; forming a contact hole exposing a portion of the source and drain regions; forming a source and drain electrodes electrically connected to the source and drain regions through the contact hole; and forming a liquid crystal layer between the first and second substrates.
REFERENCES:
patent: 5712495 (1998-01-01), Suzawa
patent: 6031249 (2000-02-01), Yamazaki et al.
patent: 6195140 (2001-02-01), Kubo et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6403409 (2002-06-01), You
patent: 6429485 (2002-08-01), Ha et al.
patent: 6451630 (2002-09-01), Lee
patent: 6512271 (2003-01-01), Yamazaki et al.
patent: 6617203 (2003-09-01), Kim et al.
patent: 6753235 (2004-06-01), So et al.
patent: 6803601 (2004-10-01), Nakajima
patent: 6887744 (2005-05-01), Hotta
patent: 7414691 (2008-08-01), Park et al.
patent: 7612836 (2009-11-01), Park et al.
patent: 2002/0142554 (2002-10-01), Nakajima
patent: 2005/0134752 (2005-06-01), Yang et al.
patent: 1019970003717 (1997-03-01), None
patent: 1019970008589 (1997-05-01), None
patent: 1019970011966 (1997-08-01), None
patent: 100161461 (1998-08-01), None
patent: 0175408 (1999-02-01), None
patent: 0177785 (1999-03-01), None
patent: 0184509 (1999-04-01), None
patent: 10-0192593 (1999-07-01), None
patent: 1020000025565 (2000-05-01), None
patent: 1020000026894 (2000-05-01), None
patent: 1020000026895 (2000-05-01), None
patent: 1020000031451 (2000-06-01), None
patent: 1020000041223 (2000-07-01), None
patent: 1020000075031 (2000-12-01), None
patent: 1020010019665 (2001-03-01), None
patent: 1020010019668 (2001-03-01), None
patent: 100297706 (2001-05-01), None
patent: 1020010054739 (2001-07-01), None
patent: 1020010055071 (2001-07-01), None
patent: 1020010056037 (2001-07-01), None
patent: 1020010110917 (2001-12-01), None
patent: 1020020009188 (2002-02-01), None
patent: 1020020022258 (2002-03-01), None
patent: 1020020071061 (2002-09-01), None
patent: 1020020071062 (2002-09-01), None
patent: 1020020074897 (2002-10-01), None
patent: 1020020078116 (2002-10-01), None
patent: 1020020079196 (2002-10-01), None
patent: 1020020080202 (2002-10-01), None
patent: 1020030006619 (2003-01-01), None
patent: 1020030030286 (2003-04-01), None
patent: 10-2003-0075921 (2003-09-01), None
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Nguyen Khiem D
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