Transistor structure and method of making the same

Details Transistor structure and method of making the same Transistor structure and method of making the same

2011-04-26

2011-04-26

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000

Reexamination Certificate

active

07932555

ABSTRACT:
A transistor structure includes a gate trench. The gate trench includes a bottle-shape bottom. The bottle-shape bottom includes a first conductive material wider than its top. The top includes a second material in a substrate, a gate structure on the gate trench and electrically connected to the first conductive material, a source/drain doping region adjacent to the gate trench and a gate channel between the source/drain doping region.

REFERENCES:
patent: 6476444 (2002-11-01), Min
patent: 7675112 (2010-03-01), Lee
patent: 2006/0049455 (2006-03-01), Jang et al.
patent: 2008/0012067 (2008-01-01), Wu
patent: 1650437 (2005-08-01), None
patent: 1877813 (2006-12-01), None

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