Semiconductor device including a plurality of cells

Details Semiconductor device including a plurality of cells Semiconductor device including a plurality of cells

2011-04-26

2011-04-26

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257SE29262, C257SE29027, C438S212000, C438S268000

Reexamination Certificate

active

07932553

ABSTRACT:
A semiconductor device includes an insulated gate transistor and a resistor. The insulated gate transistor includes a plurality of first cells for supplying electric current to a load and a second cell for detecting an electric current that flows in the first cells. A gate terminal of the plurality of first cells is coupled with a gate terminal of the second cell and a source terminal of the plurality of first cells is coupled with a source terminal of the second cell on a lower potential side. The resistor has a first terminal coupled with a drain terminal of the second cell and a second terminal coupled with a drain terminal of the first cells on a higher potential side. A gate voltage of the insulated gate transistor is feedback-controlled based on an electric potential of the resistor.

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Office Action mailed Feb. 16, 2010 from Japan Patent Office in corresponding JP Application No. 2007-331261 (and English translation).

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