Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-22

2011-03-22

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S333000, C257S334000

Reexamination Certificate

active

07910987

ABSTRACT:
A gate electrode <13> is provided to fill up a trench <300> while covering its opening. Assuming that WGrepresents the diameter (sectional width) of a head portion of the gate electrode <13> located upward beyond a P-type base layer <4> and an N+-type emitter diffusion layer <51>, WTrepresents the diameter (sectional width) of an inner wall of a linearly extending portion of the trench <300> and WCrepresents the distance between the boundary (the inner wall of the trench300) between a gate oxide film <11> and the P-type base layer <4> and an end surface of the gate electrode <13> located upward beyond the trench <300> in a section of the trench <300>, relation of either WG≧1.3·WTor WC≧0.2 μm holds between these dimensions.

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