Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-02-08

2011-02-08

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29256, C257SE29027

Reexamination Certificate

active

07884421

ABSTRACT:
In a high voltage MOS transistor, in a portion immediately below the gate electrode, peaks of concentration distribution in depth direction of a first conductivity type impurity and a second conductivity type impurity in the drain offset region are in the same depth, the second conductivity type impurity being higher concentrated than the first conductivity type impurity.

REFERENCES:
patent: 7122861 (2006-10-01), Mori
patent: 2007/0034944 (2007-02-01), Xu et al.
patent: 2005-167262 (2005-06-01), None

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