Semiconductor device

Details Semiconductor device Semiconductor device

2011-02-08

2011-02-08

Quach, Tuan N. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S368000, C257S506000, C257SE27060

Reexamination Certificate

active

07884413

ABSTRACT:
A method of manufacturing a semiconductor device, includes forming a first insulating film containing silicon oxide as a main ingredient, on an underlying region, adhering water to the first insulating film, forming a polymer solution layer containing a silicon-containing polymer on the water-adhered first insulating film, and forming a second insulating film containing silicon oxide as a main ingredient from the polymer solution layer, wherein forming the second insulating film includes forming silicon oxide by a reaction between the polymer and water adhered to the first insulating film.

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Notice of Reasons for Rejection mailed by the Japanese Patent Office on Dec. 8, 2009, for Japanese Patent Application No. 2005-166949 and English-language translation thereof.

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