Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-09
2011-08-09
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S704000, C257SE21509, C257SE23010
Reexamination Certificate
active
07994044
ABSTRACT:
Methods and apparatus to inhibit cracks and delaminations in a semiconductor chip solder bump are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first dielectric layer over a first conductor structure of a semiconductor chip and forming a first opening in the first dielectric layer to expose at least a portion of the conductor structure. The first opening defines an interior wall that includes plural protrusions. A solder structure is coupled to the first conductor structure such that a portion of the solder structure is positioned in the first opening.
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McLellan Neil
Topacio Roden R.
ATI Technologies ULC
Dickey Thomas L
Honeycutt Timothy M.
Yushin Nikolay
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