Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-08-23
2011-08-23
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S060000, C438S061000, C438S062000, C438S063000, C438S064000, C257S059000, C257S072000, C257S436000
Reexamination Certificate
active
08003425
ABSTRACT:
Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
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Adkisson James W.
Ellis-Monaghan John J.
Gambino Jeffrey P.
Musante Charles F.
Canale Anthony J.
International Business Machines - Corporation
Richards N Drew
Scully , Scott, Murphy & Presser, P.C.
Singal Ankush k
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