Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2011-05-03
2011-05-03
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S130000, C365S148000, C977S935000
Reexamination Certificate
active
07936596
ABSTRACT:
In a particular embodiment, a magnetic tunnel junction (MTJ) structure is disclosed that includes an MTJ cell having multiple sidewalls that extend substantially normal to a surface of a substrate. Each of the multiple sidewalls includes a free layer to carry a unique magnetic domain. Each of the unique magnetic domains is adapted to store a digital value.
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Byrne Harry W
Elms Richard
Pauley Nicholas J.
Qualcomm Incorporated
Talpalatsky Sam
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