Magnetic tunnel junction cell including multiple magnetic...

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S158000, C365S130000, C365S148000, C977S935000

Reexamination Certificate

active

07936596

ABSTRACT:
In a particular embodiment, a magnetic tunnel junction (MTJ) structure is disclosed that includes an MTJ cell having multiple sidewalls that extend substantially normal to a surface of a substrate. Each of the multiple sidewalls includes a free layer to carry a unique magnetic domain. Each of the unique magnetic domains is adapted to store a digital value.

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Hiromitsu Kimura, Kostas Pagiamtzis, Ali Sheikholeslami and Takahiro Hanyu; A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices; Graduate school of Information Sciences, Tohoku University; Department of Electrical and Computer Engineering, University of Toronto, Aug. 2004.
W.J. Gallagher and S.S.P. Parkin; Development of the Magnetic Tunnel Junction MRAM at IBM: From First Junctions to a 16-Mb MRAM Demonstrator Chip; IBM J. Res. & Dev.; vol. 50, No. 1; Jan. 2006.
International Search Report And The Written Opinion—PCT/US2009/032209, International Search Authority—European Patent Office—May 15, 2009.

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