Memory device transistors

Details Memory device transistors Memory device transistors

2011-08-23

2011-08-23

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE21209, C257SE21682, C257SE21689, C257SE27081, C257SE27103, C257SE27129, C257SE29306, C257SE29309

Reexamination Certificate

active

08004031

ABSTRACT:
Method and device embodiments are described for fabricating MOSFET transistors in a semiconductor also containing non-volatile floating gate transistors. MOSFET transistor gate dielectric smiling, or bird's beaks, are adjustable by re-oxidation processing. An additional re-oxidation process is performed by opening a poly-silicon layer prior to forming an inter-poly oxide dielectric provided for the floating gate transistors.

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