Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-07
2011-06-07
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000, C257S321000
Reexamination Certificate
active
07956404
ABSTRACT:
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the semiconductor body and is electrically isolated from the memory transistor well. A memory transistor including spaced-apart source and drain regions is formed within the memory-transistor well. A switch transistor including spaced-apart source and drain regions is formed within the switch-transistor well region. A floating gate is insulated from and self aligned with the source and drain regions of the memory transistor and switch transistor. A control gate is disposed above and aligned to the floating gate and with the source and drain regions of the memory transistor and the switch transistor.
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Co-pending U.S. Appl. No. 11/303,865, filed Dec. 16, 2005 entitled “Non-Volatile Two Transistor Programmable Logic Cell and Array Layout.”
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Co-pending U.S. Appl. No. 11/678,019, filed Feb. 22, 2007 entitled “Non-Volatile Two-Transistor Programable Logic Cell and Arrayand Fabrication Method,” and abandoned.
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Co-pending U.S. Appl. No. 11/152,019, filed Jun. 13, 2005, entitled Isolated-Nitride-Region Non-Volatile Memory Cell and Fabrication Method.
Bellippady Vidyadhara
Dhaoui Fethi
McCollum John
Plants William C.
Wang Zhigang
Actel Corporation
Lewis and Roca LLP
Tran Thien F
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