Method of fabricating structures

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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Details

C438S613000, C438S698000, C257SE29323

Reexamination Certificate

active

07897515

ABSTRACT:
A method of processing a stack, the method including depositing a fusible material on a first hardmask layer, the first hardmask layer disposed on a surface of a pre-processed stack, the pre-processed stack being disposed on at least a portion of a substrate; heating the fusible material layer to a temperature at or above its melting point to cause it to form a fusible material sphere, the fusible material sphere disposed on less than the entire first hardmask layer; etching the first hardmask layer, wherein the fusible material sphere prevents a portion of the first hardmask layer from etching, thereby forming a second hardmask layer; and etching the pre-processed stack, wherein at least the second hardmask layer prevents a portion of the pre-processed stack from etching, thereby forming a stack.

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patent: 2001/0021541 (2001-09-01), Akram et al.
patent: 2002/0093107 (2002-07-01), Wu et al.
patent: 2002/0175410 (2002-11-01), Cheng et al.
patent: 2003/0155408 (2003-08-01), Fanti et al.
patent: 2008/0157395 (2008-07-01), Belanger et al.
patent: 2008/0206979 (2008-08-01), Fogel et al.
K.F. Harsh, V.M. Bright and Y.C. Lee, University of Colorado, Boulder “Study of Micro-Sale Limits of Solder Self-Assembly for MEMS”, 2000 Electronic Components and Technology Conference.

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