Method of forming a semiconductor structure

Details Method of forming a semiconductor structure Method of forming a semiconductor structure

2011-04-26

2011-04-26

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S296000, C438S424000, C257S329000, C257S347000

Reexamination Certificate

active

07932134

ABSTRACT:
Disclosed is semiconductor structure that incorporates a field shield below a semiconductor device (e.g., a field effect transistor (FET) or a diode). The field shield is sandwiched between upper and lower isolation layers on a wafer. A local interconnect extends through the upper isolation layer and connects the field shield to a selected doped semiconductor region of the device (e.g., a source/drain region of a FET or a cathode or anode of a diode). Current that passes into the device, for example, during back-end of the line charging, is shunted by the local interconnect away from the upper isolation layer and down into the field shield. Consequently, an electric charge is not allowed to build up in the upper isolation layer but rather bleeds from the field shield into the lower isolation layer and into the substrate below. This field shield further provides a protective barrier against any electric charge that becomes trapped within the lower isolation layer or substrate.

REFERENCES:
patent: 5606188 (1997-02-01), Bronner et al.
patent: 5939755 (1999-08-01), Takeuchi et al.
patent: 6107660 (2000-08-01), Yang et al.
patent: 6190985 (2001-02-01), Buynoski
patent: 6479328 (2002-11-01), Kim
patent: 6483223 (2002-11-01), Samper et al.
patent: 6645796 (2003-11-01), Christensen et al.
patent: 6847114 (2005-01-01), Sett et al.
patent: 6974741 (2005-12-01), Lee et al.
patent: 7015547 (2006-03-01), Hackler, Sr. et al.
patent: 7154135 (2006-12-01), Hackler, Sr. et al.
patent: 2002/0056851 (2002-05-01), Polce et al.
patent: 2003/0017657 (2003-01-01), Han
patent: 2005/0110079 (2005-05-01), Nowak
patent: 2005/0121734 (2005-06-01), Degertekin et al.
patent: 2008/0067613 (2008-03-01), Anderson et al.
patent: 2008/0265316 (2008-10-01), Clark et al.
Clark, Jr. et al., U.S. Appl. No. 12/127,849, Office Action Communication, Feb. 9, 2010, 9 pages.
Clark, Jr. et al., U.S. Appl. No. 12/127,849, Office Action Communication, Jul. 9, 2010, 13 pages.
Clark, Jr., et al., Office Action Communication dated Jul. 31, 2009, U.S. Appl. No. 12/127,850, pp. 1-9.
Clark, Jr., et al., Office Action Communication dated Apr. 9, 2008 , U.S. Appl. No. 11/623,164, pp. 1-9.
Clark, Jr., et al., Office Action Communication dated Oct. 8, 2009, U.S. Appl. No. 12/127,849, pp. 1-10.

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