Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-02

2011-08-02

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S391000, C257SE27060, C257SE27016, C257SE21625, C257SE21679, C438S199000

Reexamination Certificate

active

07989897

ABSTRACT:
A semiconductor device includes a first MISFET and a second MISFET which are formed over a semiconductor substrate and have the same conductive type. The first MISFET has a first gate insulating film arranged over the semiconductor substrate, a first gate electrode arranged over the first gate insulating film, and a first source region and a first drain region. The second MISFET has a second gate insulating film arranged over the semiconductor substrate, a second gate electrode arranged over the second gate insulating film, and a second source region and a second drain region. The first and the second gate electrode are electrically coupled, the first and the second source region are electrically coupled, and the first and the second drain region are electrically coupled. Accordingly, the first and the second MISFET are coupled in parallel. In addition, threshold voltages are different between the first and the second MISFET.

REFERENCES:
patent: 6078195 (2000-06-01), Chen
patent: 6229340 (2001-05-01), Hagihara
patent: 2007/0207575 (2007-09-01), Taniguchi et al.
patent: 11-17522 (1999-01-01), None
patent: 11-282886 (1999-10-01), None
patent: 2000-29665 (2000-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2619443