Abrading – Machine – Rotary tool
Reexamination Certificate
2000-01-31
2001-11-06
Hail, III, Joseph J. (Department: 3723)
Abrading
Machine
Rotary tool
C451S060000
Reexamination Certificate
active
06312321
ABSTRACT:
BACKGROUND OF THE INVENTION
Recently, in the field of manufacturing semiconductors, various fine processing techniques have been and are presently developed as the size of semiconductor elements reduces and the integration degree of semiconductor elements increases. Of these techniques, the CMP (chemical mechanical polishing) technique is one of the essential elements for making a buried structure such as a buried metal wiring or a buried element separation.
In the case where a surface to be polished, which is a surface having an irregularity (recesses and projections), is smoothed by the CMP, the polishing rate is influenced by the surface state of the polishing pad of the CMP apparatus employed. Conventionally, the state of the surface of the polishing pad is designed such that abrasives within the slurry are sufficiently held on the surface of the polishing pad.
BRIEF SUMMARY OF THE INVENTION
The object of the invention is to provide a polishing apparatus capable of preventing the deterioration of a polishing property which is caused by the state of the polishing pad. In order to achieve the above-described object, there is provided, according to the present invention, a polishing apparatus comprising: a polishing pad having a plurality of functional groups on its surface, and a slurry supply means for supplying a slurry containing abrasives, onto the surface of the polishing pad.
With the above-described structure, by selecting appropriate functional groups for the abrasives in the slurry, the deterioration of the polishing property, which is caused depending on the state of the polishing pad, can be prevented. For example, in the case where the abrasives in the slurry are positively charged, a functional group which is charged negatively is selected. In this manner, the abrasives are adsorbed electrically to the functional groups, and thus the power of the polishing pad which holds abrasives is increased. As a result, the decrease in the polishing rate or the occurrence of erosion can be suppressed.
Additional objects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out hereinafter.
REFERENCES:
patent: 5709588 (1998-01-01), Muroyama
patent: 5730642 (1998-03-01), Sandhu et al.
patent: 5807165 (1998-09-01), Uzoh et al.
Co-pending U.S. Application No. 09/306,758: Attorney Docket No.: 04329.2039-00000, Title: Polishing Cloth And Method Of Manufacturing Semiconductor Device Using The Same, Inventors: Hiroyuki Yano, et al., U.S. Filing Date: May 7, 1999.
Fukushima Dai
Minamihaba Gaku
Yano Hiroyuki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hail III Joseph J.
Kabushiki Kaisha Toshiba
Ojini Anthony
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