Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-09-30
2000-05-16
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257345, 257346, 257369, 257408, 257607, 257655, H01L 2100
Patent
active
060640960
ABSTRACT:
A semiconductor device and fabrication method therefor which improve device operation of a CMOS device. The semiconductor device and fabrication method therefor prevent the deterioration of short channel properties of a PMOS device and improve current driving capability of an NMOS device. The semiconductor device has halo impurity regions formed in either the NMOS region or the PMOS region such that a channel length of the PMOS device. Also, the source and drain regions of the PMOS device are prevented from forming deep source and drain regions, thus, preventing deterioration of the short channel properties for the PMOS device.
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Abraham Fetsum
LG Semicon Co. Ltd.
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