Thin film transistors having an active region composed of intrin

Details Thin film transistors having an active region composed of intrin Thin film transistors having an active region composed of intrin

1998-12-10

2000-05-16

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 52, 257 55, 257 57, 257 66, 257348, 257349, 257350, 257351, H01L 29161

Patent

active

06064091&

ABSTRACT:
A thin film transistor (10) in an electronic device such as an active matrix display panel having an intrinsic amorphous silicon semiconductor layer (22) providing a channel region (23) between source and drain electrodes (14, 16) includes directly adjacent to the side of the semiconductor layer (22) remote from the gate electrode (25) at the channel region (23) a layer (20) of amorphous semiconductor material which has a high defect density and low conductivity that serves to provide recombination centres for photogenerated carriers. Leakage problems due to the photoconductive properties of the intrinsic semiconductor material are then reduced. Conveniently, an hydrogenated silicon rich amorphous silicon alloy (e.g. nitride etc) can be used for the recombination centre layer (20).

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"Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode" by Yuchi Sato, Nobuyuki Takahashi and Susumu Sato, Jpn. J. Appl. Phys. vol. 35 (1996), pp. L838-839.

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