Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
1999-01-07
2001-02-13
Abraham, Fetsum (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S348000, C257S349000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000, C257S355000
Reexamination Certificate
active
06188107
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention is generally directed to the field of semiconductor processing, and, more particularly, to a high performance transistor fabricated on a dielectric layer and a method of making same.
2. Description of the Related Art
There is a constant drive within the semiconductor industry to increase the operating speed of integrated circuit devices, e.g., microprocessors, memory devices, etc. This drive is fueled by consumer demands for computers and electronic devices that operate at increasingly greater speeds. This demand for increased speed has resulted in a continual reduction in the size of semiconductor devices, e.g., transistors. That is, many components of a typical field effect transistor, e.g., channel length, junction depths, gate dielectric thickness, etc., are reduced. For example, all other things being equal, the smaller the channel length of the transistor, the faster the transistor will operate. Thus, there is a constant drive to reduce the size, or scale, of the components of a typical transistor to increase the overall speed of the transistor, as well as integrated circuit devices incorporating such transistors.
However, the reduction in the channel length also requires a reduction in the depth of the source and drain regions adjacent the gate conductor. As source/drain junctions get shallower, the implantation to prevent punch-through also gets shallower. In turn, the shallower punch-through implant tends to invade the space of the threshold voltage implant, i.e., the concentration of, for example, boron, tends to be greater at the surface of the silicon. This increased concentration of the punch-through dopant, in turn, tends to make the threshold voltage of the transistor higher. Increases in the threshold voltage of a transistor are undesirable for a number of reasons. For example, an increase in the threshold voltage tends to make the transistor harder to turn “ON” and may also result in the reduction of the drive current of the device.
The present invention is directed to a semiconductor device that minimizes or reduces some or all of the aforementioned problems and a method of making same.
SUMMARY OF THE INVENTION
The present invention is generally directed to a high performance transistor and a method of making same. The method comprises forming a layer of dielectric material, forming a first layer of polysilicon above the layer of dielectric material, and patterning the first layer of polysilicon to define a plurality of source/drain regions. The method further comprises forming a second layer of polysilicon at least between said source/drain regions and above the layer of dielectric material, forming a gate dielectric above the second layer of polysilicon, and forming a gate conductor above the gate dielectric.
The transistor structure of the present invention is comprised of a layer of dielectric material, a plurality of source/drain regions positioned above the layer of dielectric material, and a layer of polysilicon positioned between the source/drain regions and above the layer of dielectric material. The apparatus further comprises a gate dielectric positioned above the layer of polysilicon and a gate conductor positioned above the gate dielectric.
REFERENCES:
patent: 5447875 (1995-09-01), Mosiehi
patent: 5719426 (1998-02-01), Iwamatsu et al.
patent: 5792697 (1998-08-01), Wen
patent: 5804472 (1998-09-01), Balasinisky et al.
patent: 5950089 (1999-09-01), Wen
patent: 62-145850 (1987-06-01), None
Gardner Mark I.
Hause Frederick N.
Wristers Derick J.
Abraham Fetsum
Advanced Micro Devices , Inc.
Williams Morgan & Amerson P.C.
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