Multilayered device micro etching method and system

Details Multilayered device micro etching method and system Multilayered device micro etching method and system

1989-08-08

1991-10-08

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423R, H01J 37305

Patent

active

050556967

ABSTRACT:
In locally reactive etching by irradiating to a multilayered workpiece reactive beam generated by extracting the reactant gas ionized or by irradiating such focussing beam as ion beam, electron beam or laser beam to the multilayered workpiece in an atmosphere of reactant gas; each layer of a multilayered device comprising a plurality of layers formed on a substrate can be accurately and quickly eteched by detecting the change of the material of the layer currently being etched and after detecting the change of material, switching reactant gas to be ionized or atmospheric reactant gas to one complying with the material of the layer currently being etched. This multilayered device micro etching method can be readily put into practice by a multilayered device micro etching system further comprising means for detecting the change of the material of layer to be etched and means for switching and supplying a plurality of reactant gases, in a micro etching appratus for performing locally rective etching.

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