Method of forming ohmic conductive components in a single chambe

Details Method of forming ohmic conductive components in a single chambe Method of forming ohmic conductive components in a single chambe

Filed on

1998-02-27

Date issued

2000-05-16

Examiner

Bowers, Charles

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

To form ohmic contact to semiconductive material

Other Related Categories

438584, 438683, H01L 2144

Type

Patent

Status

active

Patent number

060637005

Description

ABSTRACT:
A single chamber process to form ohmic conductive components for high aspect ratio holes and openings comprising the steps of supplying a microelectronic substrate to a chamber, heating the microelectronic substrate, depositing a conductor, such as titanium, onto the heated microelectronic substrate, by for example CVD, and raising the pressure of an atmosphere in the chamber, wherein the pressure is raised to: i) at least approximately 100 Torr; ii) until a silicide forms on the microelectronic substrate; or iii) until the temperature of the microelectronic substrate is at least equal to approximately 675.degree. C.

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Tung et al. "Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2 Epitaxial Structures", Physical Review Letters, vol 50, No. 6, p429, Feb. 7, 1983.
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Kamoshida, Kazuyoshi and Kunio, Saito, "Self-aligned TiN Formation by N.sub.2 Plasma Bias Treatment of TiSi.sub.2 Deposited by Selective Chemical Vapor Deposition," Jpn. J. Appl. Phy. vol. 36 (1997) pp. 642-647, Part 1, No. 2, Feb., 1997.

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