Method of manufacturing a thin film transistor involving laser t

Details Method of manufacturing a thin film transistor involving laser t Method of manufacturing a thin film transistor involving laser t

1997-01-16

2000-05-16

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438142, 438149, 438151, H01L 2100, H01L 2184

Patent

active

060636548

ABSTRACT:
Defects at the grain boundaries of a crystal silicon film, which has been crystallized from an amorphous silicon film, are passivated without using a hydrogen plasma treatment. An underlying film and a crystal silicon film which has been crystallized from an amorphous silicon film are formed on a glass substrate. A thermal oxide film is grown on the surface of the crystal silicon film by heating in an oxygen atmosphere into which NF.sub.3 gas has been added. As the thermal oxide film is grown, non-coupled Si is generated. The defects at the grain boundaries of the crystal silicon film are passivated by the additional Si. Then, the thermal oxide film is removed and the crystal silicon film is patterned into an island shape to form an active layer of a TFT. A gate insulating film, a gate electrode and the like are then formed sequentially to complete the TFT.

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