Silicon-on-insulator field effect transistor

Details Silicon-on-insulator field effect transistor Silicon-on-insulator field effect transistor

1998-09-21

2001-11-06

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S621000, C257S330000

Reexamination Certificate

active

06313506

ABSTRACT:

BACKGROUND OF THE INVENTION
FIELD OF THE INVENTION
The invention is in the field of semiconductors. More specifically, the invention pertains to an SOI-FET (SOI: “Silicon-On-Insulator”) having a gate provided on an insulating layer, source and drain zones of one conductivity type which are arranged on an insulator with respect to the gate, and having a semiconductor zone (“body”) of the other conductivity type which is arranged between the source and drain zones.
Thin SOI transistors for fast low-voltage ICs have become increasingly important in recent times (see, for example, the paper “Thin-Film SOI Emerges” by Michael L. Alles in IEEE Spectrum, June 1997, pages 37-45). If the gate electrode is capacitively coupled to the semiconductor zone between source and drain zones, the semiconductor zone being referred to as “body”, in such SOI-FETs, then the reverse current is considerably reduced in the off state. This relationship is illustrated in
FIG. 6
, in which the gate-source voltage U
GS
is plotted in V on the abscissa and the logarithm of the source-drain current I
SD
is plotted on the ordinate. At a point a
1
, a curve (a) illustrates the reverse current without capacitive coupling between the gate electrode and the “body”, while at a point b
1
, a curve (b) specifies the reverse current with capacitive coupling between gate electrode and “body”. It can immediately be seen from the diagram of
FIG. 6
that the reverse current becomes smaller with capacitive coupling between the gate electrode and the “body”.
FIG. 7
illustrates a circuit diagram of an SOI-FET 1 having a capacitor C
K
for capacitive coupling between a gate electrode G and the “body” B of the SOI-FET 1 between a source electrode S and a drain electrode D. If the gate electrode G is directly connected to the “body” B then a connection indicated by dashed lines is present.
The coupling capacitance of the capacitor C
K
should intrinsically be as large as possible since a high coupling capacitance means a low reverse current. That is to say the reverse current becomes smaller, the greater the coupling capacitance between the gate electrode G and the “body” B is.
However, capacitances are generally proportional to the area of the electrodes that form them. Accordingly, an intrinsically desired large coupling capacitance necessitates a large area, which is precisely the opposite of what is striven for in the context of integrated circuits with the generally necessary miniaturization of circuits.
SUMMARY OF THE INVENTION
It is accordingly an object of the invention to provide an SOI FET, which overcomes the above-mentioned disadvantages of the heretofore-known devices and methods of this general type and which has a large coupling capacitance between gate electrode and “body”, but requires only relatively little area.
With the foregoing and other objects in view there is provided, in accordance with the invention, an SOI-FET (silicon-on-oxide field effect transistor), comprising:
an insulator;
source and drain zones of a first conductivity type disposed on the insulator;
a gate insulating layer disposed on the source and drain zones;
a gate disposed on the gate insulating layer;
a semiconductor zone of a second conductivity type disposed between the source and drain zones; the semiconductor zone having a trench formed therein, and gate electrode material filling the trench, wherein the gate electrode material filling the trench is coupled to the semiconductor zone.
In other words, the object is satisfied in that the trench in the semiconductor body is filled with an electrode material that is capacitively or directly coupled to the semiconductor body.
The area of the coupling capacitance between the gate electrode and the semiconductor body is enlarged in conjunction with a reduced distance between these. A quite considerable increase in the coupling capacitance is therefore achieved in this way. This means, however, that the SOI-FET according to the invention has a considerably reduced reverse current compared with the prior art.
The additional outlay caused by the invention is extremely slight since only one “trench” need be introduced into the semiconductor zone of the other conductivity type, or the “body”, which can be effected by a customary etching step.
The formation of trench depressions is already known from the prior art in the context of memory cells. Reference is made for this purpose, for example, to “Microelectronic Memories”, Dietrich Rhein, Heinz Freitag, Springer-Verlag Vienna, 1992, pages 86-87.
In accordance with an added feature of the invention, the trench is offset laterally with respect to an imaginary connecting line between the source and drain zones.
In accordance with an additional feature of the invention, the trench is partly formed in a region between the source and drain zones. Alternatively, the trench is formed entirely outside the region between the source and drain zones.
In accordance with another feature of the invention, the gate electrode material is directly connected to the semiconductor zone of the second conductivity type in a bottom region of the trench and/or in a side wall region of the trench. In other words, if a direct connection between the electrode material and the semiconductor zone of the other conductivity type (i.e., the body) is sought, then this can be effected by connecting the electrode material in the region of the bottom of the depression directly to the semiconductor zone. It is also possible to connect the electrode material additionally in the region of the side walls directly to the semiconductor zone.
In accordance with a further feature of the invention, the semiconductor zone underneath the trench is heavily doped by implantation.
In accordance with again a further feature of the invention, the semiconductor zone of the second conductivity type is p-doped.
Polycrystalline silicon or aluminum can be used, for example, for the electrode material. The semiconductor zone is p-doped and it has a particularly high doping concentration underneath the depression. This can be effected by corresponding implantation of boron, for example.
In accordance with other features of the invention, the trench is a substantially circular trench, and it may have a diameter between 0.1 and 0.5 &mgr;m. The gate insulating layer has a preferred thickness between 1 and 10 nm. In a preferred embodiment, the source and drain zones together with the semiconductor zone enclose an area of about 0.5×0.2 &mgr;m.
In accordance with a concomitant feature of the invention, the source and drain zones and the semiconductor zone have a thickness of between 0.1 and 1.0 &mgr;m.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a SOI-FET, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.


REFERENCES:
patent: 5736751 (1998-04-01), Mano et al.
patent: 6049110 (2000-04-01), Koh
patent: 6087698 (2000-07-01), Saito et al.
patent: 6175135 (2001-01-01), Liao
“Microelectronic Memory” (Rhein et al.), Springer Verlag Wien, 1992, pp. 86-87; 12/92.
“Silicon-on-Insulator Ics—Computer Security—Origins of the pn Junction” (Alles), IEEE Spectrum, Jun. 1997, pp. 37-45.

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