Semiconductor memory and memory cell

Static information storage and retrieval – Read/write circuit

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Details

365154, 365190, 36523005, G11C 702

Patent

active

053052587

ABSTRACT:
A semiconductor memory includes a plurality of semiconductor memory cells and a first select line for providing a first select signal to access a selected memory cell, a second select line for providing a second select signal to access a selected memory cell, the first and second select signals being independent, a first transmission line for coupling an information with the memory cell synchronizing to the first signal and a second transmission line for coupling an information with the memory cell synchronizing to the second signal. Each memory cell includes a storage element for storing an information, with at least one input-output terminal and at least one input-output section. The section includes a first input-output control element with a control electrode connected to the first select line, a first input-output electrode connected to the input-output terminal of the storage element, and a second input-output electrode connected to the first transmission line, the first control element transmitting signals between the first and the second input-output electrode when the control electrode is activated with the first select signal, and a second input-output control element with a control electrode connected to the second select line, a first input-output electrode connected to the input output terminal of the storage element, and a second input-output electrode connected to the second transmission line, the second input-output control element transmitting signals between the first and second input-output electrode when the control electrode is activated with the second select signal.

REFERENCES:
patent: 4667310 (1987-05-01), Takada
patent: 4823314 (1989-04-01), Sharp
patent: 5099452 (1992-03-01), Yamakoshi et al.

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