Semiconductor memory device having stacked capacitor cell

Details Semiconductor memory device having stacked capacitor cell Semiconductor memory device having stacked capacitor cell

1992-05-20

1994-04-19

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Capacitors

257306, 257296, H01G 406

Patent

active

053052560

ABSTRACT:
A semiconductor memory device having a cell structure capable of maintaining a capacitance of a stacked capacitor at a satisfactory level, which is characterized in that in the first aspect, an insulation layer of an oxide film is formed on an upper surface of a polysilicon gate electrode and a side-wall of an oxide film is formed on the side surface thereof, and in the second aspect, after opening a storage electrode contact, another side-wall of an oxide film Is formed thereon. Accordingly, the space between the storage electrode contact and the polysilicon gate electrode can be made zero (0), that is, in a self-alignment form, resulting in a reduction in the necessary planar surface area of a memory cell to about 5 .mu.m.sup.2 or less.

REFERENCES:
patent: 4951175 (1990-08-01), Kurosawa et al.
patent: 5005072 (1991-04-01), Gonzalez
patent: 5173752 (1992-12-01), Motonami et al.

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