Non-destructive readout ferroelectric memory cell

Details Non-destructive readout ferroelectric memory cell Non-destructive readout ferroelectric memory cell

1989-12-18

1994-04-19

Cain, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365154, 365222, G11C 1122

Patent

active

053052552

ABSTRACT:
A non-volatile ferroelectric memory with very slight disruption of the memory contents during a read operation. The ferroelectric capacitors are connected to the row and column control lines through transistor switches. Control logic senses the level of current flowing into the ferroelectric capacitor during a read operation. If the current flow exceeds a threshold, the transistor switches are activated to reverse the polarity of the voltage applied to the ferroelectric capacitor.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.

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