Photoresist polymers of carboxyl-containing alicyclic compounds

Details Photoresist polymers of carboxyl-containing alicyclic compounds Photoresist polymers of carboxyl-containing alicyclic compounds

1999-04-29

2001-07-24

Chu, John S. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S018000, C430S905000, C430S326000, C526S283000

Reexamination Certificate

active

06265130

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a carboxyl-containing alicyclic compound as a useful monomer for preparing a photoresist resin and a process for preparing the same. More specifically, the present invention relates to a carboxyl-containing alicyclic compound which is useful as a monomer for synthesizing a photoresist resin for an E-beam (electron-beam), KrF, ArF, an X-ray or EUV which can be applied to a high-density micro-pattern of not more than 0.15 &mgr;m (DRAM of 1G or more).
BACKGROUND OF THE INVENTION
Most of the conventional ArF photoresist resins have low-etching resistance and insufficient resolution. Physical properties of a photoresist resin are affected by the type of monomers used for preparing the resin, and the production cost of a photoresist resin is very high because of the high price of the monomers used for the resin, so that mass production of the photoresist resin has been restricted. Thus, a lot of attempts have been made to develop the most proper monomer for economically producing a photoresist resin having excellent resolution and etching resistance on a large scale.
SUMMARY OF THE INVENTION
The object of the present invention is to provide photoresist monomers and copolymers which are appropriate for a lithography process using a light source having a short wavelength of not more than 250 nm.
The present invention also provides photoresist compositions comprising said copolymers.
Furthermore, the present invention provides a process for forming a photoresist pattern by using said photoresist composition and a process for preparing a semiconductor element therefrom.


REFERENCES:
patent: 3370047 (1968-02-01), Raines
patent: 4011386 (1977-03-01), Matsumoto et al.
patent: 4106943 (1978-08-01), Ikeda et al.
patent: 4491628 (1985-01-01), Ito et al.
patent: 4883740 (1989-11-01), Schwalm et al.
patent: 5087677 (1992-02-01), Brekner et al.
patent: 5212043 (1993-05-01), Yamamoto et al.
patent: 5252427 (1993-10-01), Bauer et al.
patent: 5278214 (1994-01-01), Moriya et al.
patent: 5585219 (1996-12-01), Kaimoto et al.
patent: 0071571 (1982-07-01), None
patent: 0789278A2 (1997-02-01), None
patent: 794458 (1997-09-01), None
patent: 0836119A1 (1997-11-01), None
patent: 0768813 (1957-02-01), None
patent: 1342112 (1970-05-01), None
patent: 1329997 (1970-09-01), None
patent: 2320717 (1997-06-01), None
patent: 2320501A (1997-12-01), None
patent: 2320718A (1997-12-01), None
patent: 2321060 (1998-01-01), None
patent: 04099967 (1992-04-01), None
patent: 128164 (1977-02-01), None
patent: WO 96/37526 (1996-11-01), None
patent: WO 97/33198 (1997-09-01), None
patent: WO 99/14256 (1999-03-01), None
Thomas I. Wallow, et al., “Evaluation of Cycloolefin-Maleic Anhydride Alternating Copolymers as Single-Layer Photoresist for 193nm Photolithography”, 1996, Proc. SPIE, vol. 2724, 355-364.
R.D. Allen et al., “The Influence of Photoacid Structure on the Design and Performance of 193nm Resists”, 1997, Journal of Photopolymer Science and Technology, vol. 10, 503-510.
F.M. Houlihan et al., “A Commercially Viable 193nm single Layer Resist Platform”, 1997, Journal of Photopolymer Science and Technology, vol. 10, 511-520.
J.C. Jung et al., “ArF Single Layer Resist Composed of Alicyclic Main Chain Containing Maleic Anhydride”, 1997, Journal of Photopolymer Science and Technology, vol. 10, 529-533.
S. J. Choi et al., “New ArF Single-layer Resist for 193-nm Lithography”, 1997, Journal of Photopolymer Science and Technology, vol. 10, 521-528.
T. Hattori et al., “Synthesis and Dissolution Characteristics of Novel Alicyclic Polymer With Monoacid Ester Structures”. 1997, Journal of Photopolymer Science and Technology, vol. 10, 535-544.
K. Nozaki and Ei Yaro, “New Protective Groups in Methacrylate Polymer for 193-nm Resists”, 1997, Journal of Photopolymer Science and Technology, vol. 10, 545-550.
K. Nakano et al., “Chemically Amplified Resist Based on High Etch-Resistant Polymer for 193-nm Lithography”, 1997, Journal of Photopolymer Science and Technology, vol. 561-569.
Alexander A. Dobrev, Emile Perez, Jean Claud Ader, Armand Lattes, “First Application of Functionalized in the Ester Moiety Acrylates in Diels-Alder Reaction: Invluence of Solvents on Stereochemistry”; Bulgarian Chemical Communications, vol. 28, No. 2 (1995) pp. 253-258.
T.P. McGovern and C.E. Schreck, “Mosquito Repellents: Monocarboxylic Esters of Aliphatic Diols”, Journal of the American Mosquito Control Association, vol. 4, No. 3, pp. 314-321.
CA Register No. 100207-98-5.
CA Register No. 32759-57-2.
CA Register No. 27056-70-8.
CA Register No. 174659-58-6.
CA Register No. 28503-41-5.
CA Register No. 194997-59-6.
CA Abstract No. 104:149512 & Macromolecules 19(4) 1266-8 (1986).
CA Abstract No. 91:124064 & Makromol. Chem. 180(8) 1975-88 (1979).
CA Abstract No. 113:24734 & JP 02 051511.
CA Abstract No. 127:227269 & J Photopolym. Sci. Technol. 10(4) 529-534 (1997).
CA Abstract No. 124:317926 & Marcomol. Rapid Commun. 17(3) 173-180 (1996).
CA Abstract No. 124:203171 & Macromolecules 29(8) 2755-63 (1996).
CA Abstract No. 127:227308 & Proc. SPIE-Int. Soc. Opt. Eng. (1997) 3049 Advances in Resist Technology and Processing XIV 92-103.
CA Abstract No. 66:18889 & Magy. Kem. Foly. (1966) 72(11)491-3.
CA Abstract No. 199328-07-9.

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