Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2000-04-10

2001-08-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S253000

Reexamination Certificate

active

06277677

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of forming an elevated source/drain of a semiconductor device.
2. Description of the Prior Art
FIGS. 1A
to
1
C are sectional views for explaining a conventional method of forming an elevated source/drain of a semiconductor device.
Referring to
FIG. 1A
, an isolation layer
12
to isolate between devices is formed on a semiconductor substrate
11
. A gate oxide layer
13
is formed on the semiconductor substrate
11
in which the isolation layer
12
is formed. A polysilicon layer for a gate and a mask insulation layer are sequentially formed on a resulting structure after forming the gate oxide layer
13
. The mask insulation layer, the polysilicon layer and the gate oxide layer
13
are patterned, thereby forming a gate
14
having the mask insulation layer
15
.
Referring to
FIG. 1B
, a spacer insulation layer is formed on a structure of FIG.
1
A and spacer
16
is formed on a sidewall of the gate
14
and the mask insulation layer
15
by means of a dry etching method. A native oxide layer formed on a surface of the semiconductor substrate
11
is removed by means of a wet cleaning method. An epitaxial silicon layer
17
is selectively grown on the substrate
11
exposed by the spacer
16
by a chemical vapor deposition. An impurity ion is implanted into the epitaxial silicon layer
17
and an annealing process is performed. Hence, the impurity ion is activated and diffused into the substrate
11
so that an elevated source and a drain region
18
are formed, as shown in FIG.
1
C.
In the mean time, the dry etching method utilizes the plasma. The surface of the substrate
11
is excessively exposed to the plasma so that loss of the substrate
11
is occurred and a crystal lattice thereof is destroyed by the plasma damage. It is problem in that the initial growth of the epitaxial silicon layer is difficult and a facet is generated during the initial growth, whereby doping profile of the elevated source and drains
18
is not uniformed.
SUMMARY OF THE INVENTION
Therefore, it is an object of the invention to provide a method of manufacturing a semiconductor device that can solve and prevent crystal lattice destruction and the loss of the substrate due to etching for forming a spacer when forming the elevated source and drain.
To achieve the above object, a method of manufacturing a semiconductor device according to the present invention comprises the steps of:
sequentially forming a gate oxide layer, a gate and a mask insulation layer on a semiconductor substrate;
sequentially forming first and second insulation layers on a resulting structure after forming the mask insulation layer;
forming a first spacer on a side wall of the gate and the mask insulation layer having the first insulation layer by etching the second insulation layer;
etching the first insulation layer so that an undercut is formed and the substrate of both sides of the first spacer and surface of the mask insulation layer are exposed, whereby a second spacer is formed on side wall of the gate and mask insulation layer;
forming an epitaxial silicon layer on the exposed substrate; and
forming elevated source and drain regions in the substrate by implanting an impurity ion through the epitaxial silicon layer and by performing annealing process.


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