Method of applying partial reverse mask

Details Method of applying partial reverse mask Method of applying partial reverse mask

1999-02-01

2001-08-07

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S637000, C438S638000, C438S669000

Reexamination Certificate

active

06271118

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates in general to an application of a partial reverse mask. More particularly, the present invention relates to a method of applying the partial reverse mask on a dielectric layer with a low dielectric constant.
2. Description of the Related Art
In the manufacturing of very large scale integrated (VLSI) semiconductors, multilevel interconnects, fabricated from two or more metal interconnect layers above a wafer, are quite common. The purpose of having multilevel interconnects is to increase three-dimensional wiring line structures so that the densely packed devices can be properly linked together. In general, the first layer of wiring lines can be made from polysilicon or a metal, and can be used to electrically couple the source/drain regions of devices in the substrate. In other words, through the formation of vias, devices in substrate are electrically connected together. For connecting more devices, a second or more layers of metallic wiring can be used. With the increase in level of integration, a capacitor effect between metallic lines, which can lead to RC delay and cross talk between vias, increases correspondingly. Consequently, speed of conduction between metallic lines is slower. Therefore, to reduce the capacitor effect, a type of low-k dielectric material is now commonly used for forming inter-layer dielectric or inter-metal dielectric (ILD/IMD) layers. The low-k dielectric material, for example, FSG, is quite effective in reducing RC delay between metallic lines. In practice, however, there are a number of technical problems regarding the use of low-k dielectric that still need to be addressed. One of them is the poor adhesive ability of the low-k material.
SUMMARY OF THE INVENTION
It is therefore an object of the invention to provide a method of applying a partial reverse mask for improving the problem of poor adhesion.
The invention achieves the above-identified object by providing a method of applying a partial reverse mask. A method for applying the partial reverse mask is provided. A substrate is provided. A first conductive layer with a first width and a second conductive layer with a second width is formed on the substrate. A dielectric layer is formed on the first and second conductive layers. Photolithography and etching processes are performed on the dielectric layer to at least expose a first region of the first conductive layer and a second region of the second conductive layer. An oxide layer is then formed over the dielectric layer and the exposed first and second conductive layers.
The invention achieves the above-identified object by providing another method of applying a partial reverse mask. A method for applying the partial reverse mask is provided. A substrate is provided. A first conductive layer with a first width and a second conductive layer with a second width is formed on the substrate by using a first mask having a first pattern with the first width and a second pattern with the second width. A dielectric layer is formed on the first and second conductive layer. The first mask is reversed to form a second mask, the second mask has a third pattern with a third width, wherein the third width has a value obtained by deducing a M and S values from the first width. The M value is about half of the first width A
1
(FIG.
1
B). The S value is a bias or deviation value of the metal width. An oxide layer is formed over the dielectric layer and the exposed first conductive layer.
The invention achieves the above-identified object by providing another method of applying a partial reverse mask. A method for applying the partial reverse mask is provided. A substrate is provided. A first conductive layer with a first width and a second conductive layer with a second width is formed on the substrate by using a first mask having a first pattern with the first width and a second pattern with the second width. A dielectric layer is formed on the first and second conductive layer. A plurality of openings is formed in the dielectric layer exposing a position corresponding to the first and second conductive layers by using a second mask having a third pattern with a third width and a fourth pattern with a fourth width, wherein the third width has a value obtained by deducting a bias from the first width and the fourth width has a value obtained by deducting the bias from the second width. An oxide layer is formed over the dielectric layer and the exposed first and second conductive layers.


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patent: 5275913 (1994-01-01), Lin
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patent: 6008116 (1999-12-01), Tran
Webster's II New College Dictionary, Houghton Mifflin Company, p. 106, 1995.

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