Method to erase a flash EEPROM using negative gate source erase

Details Method to erase a flash EEPROM using negative gate source erase Method to erase a flash EEPROM using negative gate source erase

1997-09-12

1999-05-11

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518519, 36518526, 36518527, 36518533, G11C16/04

Patent

active

059034998

ABSTRACT:
A method to erase data from a flash EEPROM while electrical charges trapped in the tunneling oxide of a flash EEPROM are eliminated to maintain proper separation of the programmed threshold voltage and the erased threshold voltage after extended programming and erasing cycles. The method to erase a flash EEPROM cell begins by first applying a moderately high positive voltage pulse to the source of the EEPROM cell. Simultaneously, a first relatively large negative voltage is applied to the control gate. While a ground reference potential is applied to the semiconductor substrate. At this same time the drain is floating. The flash EEPROM cell is then detrapped by floating the source and drain and applying the ground reference potential to the semiconductor substrate. At the same time a second relatively large negative voltage pulse is applied to the control gate.

REFERENCES:
patent: 5231602 (1993-07-01), Radjy et al.
patent: 5255237 (1993-10-01), Kodama
patent: 5371705 (1994-12-01), Nakayama et al.
patent: 5481494 (1996-01-01), Tang et al.
patent: 5485423 (1996-01-01), Tang et al.
patent: 5521866 (1996-05-01), Akaogi
patent: 5680349 (1997-10-01), Atsumi et al.
patent: 5729494 (1998-03-01), Gotou et al.

Affiliated with

Also associated with

Rating

Method to erase a flash EEPROM using negative gate source erase does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to erase a flash EEPROM using negative gate source erase , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to erase a flash EEPROM using negative gate source erase will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-250858