Synchronous semiconductor memory device

Details Synchronous semiconductor memory device Synchronous semiconductor memory device

2001-02-26

2001-09-18

Nelms, David (Department: 2818)

Static information storage and retrieval

Read/write circuit

Serial read/write

C365S233100

Reexamination Certificate

active

06292419

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention generally relates to a synchronous semiconductor memory device which operates in synchronism with an external clock signal, and, more particularly, to a synchronous semiconductor memory device such as a pipeline burst SRAM in which the reading/writing of a plurality of data is performed.
2. Description of the Background Art
FIG. 12
is a block diagram showing a pipeline burst SRAM which is a former synchronous semiconductor memory device. In the figure, reference numeral
101
designates an address buffer for outputting to an address resistor
102
a plurality of address signals SA inputted from the outside, and address signals /SA obtained from the address signals SA. Reference numeral
102
designates an address register for holding the address signals SA and /SA inputted through the address buffer
101
, and outputting the address signals SA and /SA to a decoder
106
in synchronism with a SAC clock signal (hereinafter referred to as SACCLK signal). Reference numeral
103
designates an address buffer for outputting externally inputted lowermost place address signals SA
0
and SA
1
to a counter
105
.
104
is a counter enabling signal generator (ADV State Machine) for generating a counter enabling signal (hereinafter referred to as ADVCLK signal) synchronizing with an external clock signal. More particularly, the generator
104
generates the ADVCLK signal on the basis of a CE signal generated from external signals SE
1
, SE
2
, and SE
3
#, and the SACCLK signal, and outputting the ADVCLK signal to the counter
105
. The generator
104
, upon the inputting of a signal for data reading purpose (having a state in which the SACCLK signal takes an “H” value and the CE signal takes an “H” value), generates a ADVCLK signal in synchronism with an external clock signal input next to that generated at the time of the inputting of the data reading purpose signal. In addition, a similar ADVCLK signal is also generated when a signal for data writing purpose is inputted.
Reference numeral
105
designates a counter for outputting the lowermost place address signals inputted from the outside in synchronism with the SACCLK signal to the decoder
106
, and outputting to the decoder
106
address signals corresponding to the lowermost place address signals in response to the ADVCLK signal generated in the counter enabling signal generator
104
. Reference numeral
106
designates a decoder for generating instructions for data reading/writing or the like for the addresses obtained from the addresses outputted from the counter
105
and the address outputted from the address register
102
.
Reference numeral
107
designates an SRAM core capable of information (data) reading or writing. The SRAM core
107
reads out data from a specified address or writes data to the specified address, in response to the instruction generated by the decoder
106
.
Reference numeral
108
designates an output register for holding the data transmitted from the SRAM core
107
via a data bus RD, and outputting these data to an output buffer
110
in synchronism with the external clock signal. Reference numeral
109
designates an output enabling signal generator (OE State Machine) for outputting to an output buffer
110
as well as to an input buffer
111
an output enabling signal (hereinafter referred to as OE signal) synchronizing with the external clock signal generated on the basis of the external signal CE and the SACCLK signal. Reference numeral
110
designates an output buffer for outputting data transmitted from the output register
108
to the outside in response to the OE signal.
Reference numeral
111
designates an input buffer for taking from outside data to be inputted to the SRAM core
107
upon receipt of the OE signal. Reference numeral
112
designates an input register for holding data input from the outside through the input buffer
111
, and inputting the holding data to the SRAM core
107
in synchronism with the external clock signal.
Now, the operation of the former synchronous semiconductor memory device is described.
In a case of an operation for reading out data at a specified address to the outside from the SRAM core
107
, the signal for data reading purpose (hereinafter referred to as read signal) is input from the outside. (That is, data is read out when SACCLK, SGW#, and CE obtained from SE
1
, SE
2
, and SE
3
# becomes signals for reading.) The pulse of the external clock signal at the time of the inputting of the read signal is named as the 1st pulse, and the pulses subsequently generated by the external clock signal are named as the 2nd pulse, the 3rd pulse hereunder.
When such read signal is externally inputted, the counter enabling signal generator circuit
104
generates an ADVCLK signal having three pulses respectively synchronizing with the 2nd, 3rd, and 4th pulses of the external clock signal, and outputs the ADVCLK signal to the counter
105
.
Upon the inputting of the read signal, the counter
105
outputs to the decoder
106
, the lowermost place address signals input from the outside in synchronism with the SACCLK signal consisting of a pulse synchronized with the 1st pulse of the external clock signal. The counter
105
also sequentially outputs the addresses corresponding the lowermost address signals to the decoder
106
in synchronism with the pulse of the ADVCLK signal. Through such operation of the counter
105
, in response to one read signal for data reading purpose, four mutually related addresses are sequentially sent to the decoder
106
in synchronism with the external clock signal.
The decoder
106
determines memory selection lines in the SRAM core
107
according tb the address signals inputted from the counter
105
and the address signals inputted from the address register
102
, and sends an instruction to the SRAM core
107
for reading the data stored at locations corresponding to the selection lines. The SRAM core
107
responds to such instruction to output the data stored at the corresponding locations to the output resistor
108
via the data bus RD.
The output register
108
outputs the data inputted via the data bus RD to the output buffer
110
in synchronism with the external clock signal. The output buffer
110
outputs the data held in the output register
108
to the outside in response to the OE signal.
In the former memory device, the OE signal is generated in the output enabling signal generator circuit
109
in response to the read signal or the signal for data writing purpose (hereinafter referred to as write signal) so as to be in synchronism with a predetermined external clock signal.
In a data writing operation, data inputted from the outside (i.e., from DINDOUT terminal) in response to a write signal is inputted to the input register
112
, which inputs the data to the SRAM core
107
in synchronism with the external clock signal. In this operation, a location for writing is inputted in a manner similar to that described in the above reading operation, whereby the above data is made to be written to this location.
In this specification, the symbol “/” represents the negative value of a signal as /A means the negative value of a signal A. Particularly, “#” is used instead of “/” with regard to the terminal of a synchronous semiconductor memory device.
The former synchronous semiconductor memory device constructed as described above, for one read signal, sequentially outputs data corresponding to an external address and a plurality of addresses relative to the external address. Similarly, the former device, for one write signal, continuously takes data corresponding to an external address and a plurality of addresses according to the external address.
The former synchronous semiconductor memory device outputs (or takes) data regarding to a plurality of related addresses for one read (or write) signal even in a test operation. In other wards, the former device cannot outputs (or takes) data only solely relating to a single address. Thus,

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