High-density semiconductor read-only memory device

Details High-density semiconductor read-only memory device High-density semiconductor read-only memory device

1997-05-05

1998-10-20

Tsai, Jey

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257391, 257910, H01L 218246

Patent

active

058250697

ABSTRACT:
A ROM device of the type including an array of diode-type memory cells and a method for fabricating the same are provided. The bit lines of this ROM device are a plurality of diffusion regions formed in an alternate manner on the bottom of a plurality of parallel-spaced trenches and on the top of the solid portions between these trenches. This particular arrangement of the bit lines allows for an increased integration of the diode-type memory cells on a limited wafer surface without having to reduce the feature size of the semiconductor components of the ROM device. The diode-type memory cells that are set to a permanently-ON state involve a P-N junction diode being formed therein, wherein the P-N junction diode is electrically connected via a contact window in an insulating layer to the associated one of the overlaying word lines. Other memory cells that are set to a permanently-OFF state are formed with no P-N junction diode therein.

REFERENCES:
patent: 5504025 (1996-04-01), Fong-Chun et al.
patent: 5633519 (1997-05-01), Yamazaki et al.

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