Three-terminal silicon synaptic device

Details Three-terminal silicon synaptic device Three-terminal silicon synaptic device

1996-07-26

1998-10-20

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257322, H01L 29788

Patent

active

058250638

ABSTRACT:
A three-terminal silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.

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