Semiconductor device and an interconnection structure of same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257303, 257304, 257305, 257385, 257774, H01L 2976, H01L 27108, H01L 2994, H01L 31119

Patent

active

058250590

ABSTRACT:
A connection hole of a semiconductor device having a structure of preventing the connection hole from being short-circuited or degraded in dielectric strength even if there occurs misalignment when an opening portion is formed in an interlayer insulating film at a position over a conductive layer for forming the opening portion. The connection hole includes an inner wall on which an insulating film protected by a side wall made from non-crystal silicon is formed.

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