Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-30
1998-10-20
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257303, 257304, 257305, 257385, 257774, H01L 2976, H01L 27108, H01L 2994, H01L 31119
Patent
active
058250590
ABSTRACT:
A connection hole of a semiconductor device having a structure of preventing the connection hole from being short-circuited or degraded in dielectric strength even if there occurs misalignment when an opening portion is formed in an interlayer insulating film at a position over a conductive layer for forming the opening portion. The connection hole includes an inner wall on which an insulating film protected by a side wall made from non-crystal silicon is formed.
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Clark Jhihan B.
Saadat Mahshid D.
Sony Corporation
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