Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-20
1998-10-20
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257291, 257292, 257443, 257448, H01L 31062, H01L 31113
Patent
active
058250565
ABSTRACT:
A solid-state imaging device can improve a detection sensitivity of a signal means by decreasing a parasitic capacity of a horizontal signal line. In a solid-state imaging device in which a plurality of pixels are arranged in a matrix fashion, a pixel is flowed through a horizontal switch (39) to a horizontal signal line (40) as a signal charge, and a signal is outputted by a signal detecting means connected to the end off the horizontal signal line (40), an insulating gate-type field-effect transistor comprising the horizontal switch (39) includes channels extended at least in two directions between its source electrode connected to the horizontal signal line (40) and drain electrode.
REFERENCES:
patent: 4952996 (1990-08-01), Nishizawa et al.
patent: 5285091 (1994-02-01), Hamasaki
patent: 5341008 (1994-08-01), Hynecek
patent: 5525813 (1996-06-01), Miyake et al.
patent: 5563432 (1996-10-01), Miura et al.
Mintel William
Sony Corporation
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