Semiconductor device including resistance element with superior

Details Semiconductor device including resistance element with superior Semiconductor device including resistance element with superior

1997-06-16

1999-05-11

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257359, 257379, 257380, 257381, H01L23/62

Patent

active

059030330

ABSTRACT:
A well region is provided on a doped semiconductor layer. A resistor element is formed on the well region and a fixed voltage level is applied. A parasitic capacitance is formed between the well region and the resistor and a noise generated at one end of the resistor is compensated for or filtered by the parasitic capacitance.

REFERENCES:
patent: 5327224 (1994-07-01), Ikegami et al.
patent: 5440162 (1995-08-01), Worley et al.
patent: 5479045 (1995-12-01), Narahara et al.

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