Semiconductor memory device and method for manufacturing the sam

Details Semiconductor memory device and method for manufacturing the sam Semiconductor memory device and method for manufacturing the sam

1994-07-19

1999-05-11

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257311, 257401, H01L27/02;23/48;29/40

Patent

active

059030259

ABSTRACT:
In an element region, in which a memory cell is constituted, on a silicon substrate, a gate electrode with which each of a plurality of the memory cells is individually constituted is individually disposed for each memory cell. A first and a second inter-layer insulating films are formed right upon the gate electrode. A jumping wiring is disposed on the insulating films. The jumping wiring is directly and electrically connected, within the memory pattern region in which the memory cell is formed, with each individual gate electrodes through the jumping contact.

REFERENCES:
patent: 4392150 (1983-07-01), Courreges
patent: 4460911 (1984-07-01), Salters
patent: 5177575 (1993-01-01), Ikeda
patent: 5245205 (1993-09-01), Higasitani et al.
patent: 5449934 (1995-09-01), Shono et al.

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