Semiconductor device, method of fabricating the same, and sputte

Details Semiconductor device, method of fabricating the same, and sputte Semiconductor device, method of fabricating the same, and sputte

1997-02-12

1999-05-11

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257310, 257595, H01L27/108;29/76

Patent

active

059030232

ABSTRACT:
A method of fabricating a semiconductor device comprises the steps of: (a) forming a mask layer over an upper surface of a semiconductor substrate such that the mask layer has an aperture penetrating the mask layer and having an inclined lateral wall so as to make the aperture inverted taper shaped; (b) forming a first dielectric layer at a first area over the upper surface of the semiconductor substrate within the aperture by sputtering at a first sputtering incidence direction; and (c) forming a first electrode layer at a second area over the upper surface of the semiconductor substrate within the aperture by sputtering at a second sputtering incidence direction which is different from the first sputtering incidence direction.

REFERENCES:
patent: 5266820 (1993-11-01), Van Berkel
patent: 5406122 (1995-04-01), Wong et al.
"Gallium Arsenide Processing Techniques", published in 1984 by Artech House Inc., pp. 306-314.

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