Method for making semiconductor device

Details Method for making semiconductor device Method for making semiconductor device

1997-08-14

2001-01-02

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S784000, C438S789000, C427S255290

Utility Patent

active

06169023

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for making a semiconductor device having an insulator layer for isolating conductive layers from each other.
2. Description of the Related Art
In a semiconductor device, conductive layers of different layers or of same layer are insulated from each other by being covered with an insulator layer. With ever-increasing miniaturization of design rule of a semiconductor device, however, there has become problematic a delay in operation due to parasitic capacitance originating from an insulator layer together with a semiconductor layer insulated by that insulator layer. Thus, need for an insulator layer having low dielectric constant is growing in order to effectively suppress an increase in capacitance even when the layer thickness is made smaller.
As methods for forming an insulator layer having low dielectric constant, there have been known a method for forming an SiOF layer using TEOS with addition of C
2
F
6
as fluorine source (25th SSDM'93, p. 161) and a method for forming an SiOF layer using TEOS with addition of NF
3
as fluorine source (40th United Lecture Conference related to Applied Physics, Preprint, 1a-ZV-9).
According to the above-mentioned conventional methods, however, decomposition energy of C
2
F
6
or NF
3
is approximately equal to that of the alkyl groups in TEOS.
This leads to contamination of the SiOF layer by reaction by-products. Introduction in stable fashion of fluorine into the SiOF layer also meets difficulty here. For this reason, with increasing amount of fluorine included in the SiOF layer, layer quality of the SiOF layer markedly worsens. This leads to higher hygroscopicity of the SiOF layer, resulting in a decrease in the reliability of a semiconductor device.
In order to form an SiOF layer having an excellent layer quality, there has been proposed a method for forming an SiOF layer using an SiF
4
/O
2
type gas that contains fluorine in the raw material gas structure (40th United Lecture Conference related to Applied Physics, Preprint, 31p-ZV-1).
However, since the SiF
4
/O
2
type gas is relatively difficult to decompose, a high density plasma CVD apparatus is required in order to form an SiOF layer by using this gas. In other words, a new type plasma CVD apparatus, different from the conventional one, is required here. According to this conventional method, it is difficult to manufacture with ease a semiconductor device that is fast in operation and high in reliability.
SUMMARY OF THE INVENTION
A method for making a semiconductor device according to a first invention of the present invention is characterized in that an insulator layer is formed by using as raw material an organic Si compound having Si—F bonds.
Among others, the above organic Si compound is preferably a compound having a chain or cyclic structure.
Preferable examples of the above organic Si compound having a chain or cyclic structure are: fluoroalkoxysilane (F
x
R
y
Si; x+y=4, x≧1; R:hydrogen, alkoxy or alkyl group), chain polysilane (F
x
R
y
Si—O—SiR
m
F
n
; x+y=4, m+n=4, x, n ≧1; R:hydrogen, alkoxy or alkyl group), cyclic polysilane {(F
x
R
y
)
4
SiO
4;
x+y=4, x, y >1; R:hydrogen, alkoxy or alkyl group} and higher fluorosilane {f(F
x
R
y
)
2m+2
Si
m
; x+y=4, x, m >1; R:hydrogen, alkoxy or alkyl group}.
In a method for making a semiconductor device according to the present invention, the above insulator layer is preferably formed by a plasma CVD method using as raw material gas the above organic Si compound.
A method for making a semiconductor device according to a second invention of the present invention is characterized in that the above insulator layer is formed by repeating more than once by turns a step of adsorption of a raw material gas comprising the above organic Si compound by a substrate on which the above insulator layer is to be formed and a step of removal of unreacted matters from the adsorption layer by plasma treatment.


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patent: 5334552 (1994-08-01), Homma
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patent: 5700736 (1997-12-01), Muroyama
patent: 5807785 (1998-09-01), Ravi
patent: 5827785 (1998-10-01), Bhan et al.
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patent: 5908672 (1999-06-01), Ryu et al.
patent: 517548A2 (1992-12-01), None

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