Electronic digital logic circuitry – Interface – Supply voltage level shifting
Reexamination Certificate
1999-10-15
2001-08-21
Tokar, Michael (Department: 2819)
Electronic digital logic circuitry
Interface
Supply voltage level shifting
C326S057000, C327S387000
Reexamination Certificate
active
06278294
ABSTRACT:
TECHNICAL FIELD
The present invention relates to an output buffer circuit equipped with a function of converting the signal level between different power-supply voltages and, more particularly, to an output buffer circuit provided with a set of MOS transistors in its last stage.
BACKGROUND ART
FIG. 1
is a circuit diagram of a conventional output buffer circuit disclosed, for example, in Japanese Patent Application No. Hei. 7-176084, depicting the configuration of an input/output circuit of a semiconductor integrated circuit device equipped with a signal level converting function. In an output buffer of an interface circuit which is used between semiconductor integrated circuit devices that operate on different power supply voltages, such a half-latch type signal level converter as shown is used to convert the internal signal level from a low to a high voltage, and the output stage is formed by a push-pull circuit which has a buffer last stage made up of CMOS-structured inverter gates and NMOS-NMOS transistors.
Incidentally, what is intended to mean by the semiconductor integrated circuit device which possesses the signal converting function is a semiconductor integrated circuit device equipped with a function by which the signal voltage provided from a device operating on the power supply voltage in a large scale integrated circuit (LSI) is level converted for output to an external circuit which operates on a power-supply voltage different from that of the internal circuit, and a function by which a signal provided from a device operating on an external power-supply voltage different from the internal one is level converted to the signal voltage of the internal circuit for input thereinto.
In
FIG. 1
, reference numeral
1
denotes an input/output terminal;
2
denotes a control terminal;
3
denotes an input terminal;
4
a
and
4
b
denote first power-supply potential points to which a first power-supply voltage VDD
1
is fed and second power-supply potential points to which a second power-supply voltage VDD
2
is fed, respectively;
5
denotes ground potential points to which the ground potential GND is fed;
6
denotes an input/output control circuit;
7
a
and
7
b
denote a first converter circuit block and a second converter circuit block, respectively; and
8
a
denotes a buffer circuit. These circuit elements constitute an output buffer circuit
91
a
. Reference numeral
10
denotes an input buffer and
11
a static-shielding circuit.
To the input/output terminal
1
is connected an internal circuit via the input buffer
10
. Connected further to the input/output terminal
1
via the output buffer circuit
91
a
are the control terminal
2
which is supplied with a control signal IN
1
from the internal circuit and the input terminal
3
which is supplied with an output signal IN
2
from the internal circuit.
The output buffer circuit
91
a
is composed principally of the input/output control circuit
6
, the signal level converter circuit
7
and the buffer circuit
8
a
, and the control terminal
2
and the input terminal
3
are connected to the input/output control circuit
6
. The input/output control circuit
6
outputs to the signal level converter circuit
7
, and the signal level converter circuit
7
outputs to the buffer circuit
8
a
via connection points N
13
and N
23
.
The input/output control circuit
6
and the first converter circuit block
7
a
forming the first half part of the signal level converter circuit
8
operate on the first power-supply voltage VDD
1
, which is also the power-supply voltage of the internal circuit, and the ground potential GND. On the other hand, the second converter circuit forming the second half part of the signal level converter circuit
7
and the buffer circuit
8
a
operate on the second power-supply voltage VDD
2
, which is generally higher in voltage level than the first power-supply voltage VDD
1
, and the ground potential. The first power-supply voltage VDD
2
and the second power-supply voltage VDD
2
are supplied via the power-supply potential points
4
a
and
4
b
, respectively, and the ground potential GND is supplied via the ground potential points
5
.
A description will be given below of the cases where the control signal IN
1
and the output signal IN
2
that are applied to the control terminal
2
and the input terminal
3
, respectively, are at the “H” level and at the “L” level.
When the control signal IN
1
is at the “H” level, the output signal IN
2
is at the “L” level and the signal level converter circuit
7
forces the connection points N
13
and N
23
to the “L” level (the ground potential GND) and the “H” level (the second power-supply voltage VDD
2
), respectively. As a result, transistors Q
13
and Q
14
of the buffer circuit
8
a
both turn OFF, making the buffer circuit
8
a
high-impedance relative to the input/output terminal
1
. Hence, an external signal fed to the input/output terminal
1
is transmitted to the input buffer
10
with no loss.
On the other hand, when the control signal IN
1
is at the “L” level and the output signal IN
2
at the “L” level, the signal level converter circuit
7
forces either of the connection points N
13
and N
23
to the “L” level. As a result, the transistors Q
13
and Q
14
of the buffer circuit
8
a
turn ON and OFF, respectively, making the input/output terminal
1
“L” level.
And, when the control signal IN
1
is the “L” level and the output signal IN
2
at the “H” level, the signal level converter circuit
7
forces either of the connection points N
13
and N
14
to the “H” level. As a result, the transistors Q
13
and Q
14
of the buffer circuit
8
a
turn ON and OFF, respectively, making the input/output terminal
1
“H” level.
FIG. 2
schematically illustrates in section the transistors Q
13
and Q
14
forming the last stage of the buffer circuit
8
a
. Reference numeral
1
denotes an input/output terminal,
4
b
a second power-supply potential point,
5
a ground potential point, and N
15
and N
24
connection points. In P wells on a P-type semiconductor substrate connected to the ground potential point GND there are formed the NMOS transistors Q
13
and Q
14
. The NMOS transistor Q
13
has its drain electrode connected to the second power-supply potential point
4
b
, its gate electrode connected to the connection point N
15
, its source electrode connected to the input/output terminal
1
and its P well potential connected to the ground potential point
5
. The NMOS transistor Q
14
has its source electrode connected to ground potential point
5
, its gate electrode connected to the connection point N
24
, its drain electrode connected to the output terminal
1
and its P well potential connected to the ground potential point
5
.
FIG. 3
is a circuit diagram of another example of the conventional output buffer circuit, depicting the configuration of an input/output circuit of a semiconductor integrated circuit device equipped with the signal level conversion facility. Reference numeral
8
b
denotes a buffer circuit, which is a substitute for the buffer circuit
8
a
of the configuration shown in FIG.
1
. More specifically, the buffer circuit
8
b
has a CMOS push-pull type output stage by replacing a PMOS transistor Q
15
for the NMOS transistor Q
13
in the final stage of the buffer circuit
8
a
and omits an inverter gate G
18
. Reference numeral
91
b
denotes the output buffer circuit.
FIG. 4
depicts in section the transistors Q
15
and Q
14
forming the final stage of the buffer circuit
8
b
. Reference numeral
1
denotes an input/output terminal,
4
b
a second power-supply potential point,
5
a ground potential point, N
14
and N
24
connection points, and Q
14
and Q
15
an NMOS and a PMOS transistor. In a P well on a P-type semiconductor substrate connected to the ground potential point GND there is formed the NMOS transistor Q
14
, which has its source electrode connected to the input/output terminal
1
and its P well potential connected to the ground potential point
5
. On the other hand, the PMOS transistor Q
15
is
Chang Daniel D.
Leydig Voit & Mayer Ltd
Mitsubishi Denki & Kabushiki Kaisha
Tokar Michael
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