Method for forming a silicide layer in a semiconductor device

Details Method for forming a silicide layer in a semiconductor device Method for forming a silicide layer in a semiconductor device

1995-09-06

1998-10-20

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438649, 438651, H01L 2144

Patent

active

058246002

ABSTRACT:
A method for forming a silicide layer in a semiconductor device, including the steps of: forming a refractory metal layer on a semiconductor substrate; forming a cobalt layer on the refractory metal layer; implanting impurities in the interface between the refractory metal layer and the cobalt layer; heat treating the semiconductor substrate such that cobalt atoms from the cobalt layer pass through the refractory metal layer and form a cobalt silicide epitaxy layer on the semiconductor substrate; and removing the remaining cobalt layer and the remaining refractory metal layer.

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