Process of fabricating metal gate electrode

Details Process of fabricating metal gate electrode Process of fabricating metal gate electrode

1996-12-26

1999-08-31

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, 438655, H01L 2144

Patent

active

059465980

ABSTRACT:
A process of fabricating metal gate electrodes for MOS transistors included in semiconductor IC devices is disclosed. The process includes first providing a silicon substrate having formed over the surface thereof the field oxide layers and a gate dielectric layer defined in the transistor active region. A thin layer of silicon is then formed over the surface of the gate dielectric layer. A metal layer is then deposited over the surface of the gate dielectric layer by performing an LPCVD procedure in a gaseous environment containing silane and tungsten fluoride. The LPCVD procedure deposits tungsten over the surface of the silicon layer by reducing the tungsten fluoride into tungsten atoms while consuming the thin silicon layer to exhaustion. The gate structure in the active region is then formed by patterning in the metal layer, and the gate structure includes the metal gate electrode layer and the gate dielectric layer.

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