Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-02-20
1999-08-31
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438701, 438673, 438702, 257774, 257760, H01L 21469
Patent
active
059465930
ABSTRACT:
A semiconductor device is manufactured in accordance with the procedure as follows. At first, there is formed an interlayer insulating film including a SOG film (3) overlying a first metal wiring (1), a thin silicon nitride film (10) overlying the SOG film (3) and an oxide film (4) overlying the silicon nitride film (10). Next, an isotropic etching is performed to the oxide film (4). Then, there is formed a throughhole (7) through the interlayer insulating film so as to expose the first metal wiring (1) outward. Moreover, there is formed another oxide film (11) onto the semiconductor device on a way of a manufacturing process thereof. Thus, there is performed a whole anisotropic etching onto the other oxide film (11) by means of a dry etching process thus to reserve the other oxide film (11a) only on a side wall of the throughhole (7). Finally, there is formed a second metal wiring (8) connected to the first metal wiring (1) through the throughhole (7).
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Everhart Caridad
Mitsubishi Denki & Kabushiki Kaisha
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