Semiconductor device having metal silicide layer

Details Semiconductor device having metal silicide layer Semiconductor device having metal silicide layer

1998-03-19

1999-08-31

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, 257751, 257755, 257756, 257757, 257763, 257764, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059457198

ABSTRACT:
A gate oxide film is formed on an element region at the surface of a silicon substrate. A polycrystalline silicon film doped with a large amount of phosphorus is formed on the gate oxide by the CVD method. A titanium nitride layer with about 10 nm thickness is deposited on the polycrystalline film by the sputtering method. Further, a titanium silicide thin film with a 100 nm thickness is deposited on the titanium nitride layer. Furthermore, a silicon layer with about 50 nm thickness is formed on the titanium silicide thin film. Accordingly, a gate electrode is provided.

REFERENCES:
patent: 5710454 (1998-01-01), Wu
patent: 5714786 (1998-02-01), Gonzalez et al.

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