Lateral silicon-controlled rectifier for electrostatic discharge

Details Lateral silicon-controlled rectifier for electrostatic discharge Lateral silicon-controlled rectifier for electrostatic discharge

1998-04-06

1999-08-31

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257173, H01L 2974, H01L 2362

Patent

active

059457147

ABSTRACT:
A lateral silicon-controlled rectifier, which comprises a semiconductor layer of a first conductivity type, a floating semiconductor layer of a second conductivity type, a first doped region of the first conductivity type, a first doped region of the second conductivity type, and a second doped region of the first conductivity type, is disclosed. The floating semiconductor layer of a second conductivity type is in electrical contact with the semiconductor layer of a first conductivity type to establish a junction. The first doped region of the first conductivity type is formed in the semiconductor layer of a second conductivity type and coupled to a first node. Both the first doped region of the second conductivity type and the second doped region of the first conductivity type are formed in the semiconductor layer of a first conductivity type and coupled to a second node. When electrostatic discharge stress occurs between the first node and second node, the junction will enter breakdown so as to trigger the lateral silicon-controlled rectifier and thus conduct a discharge current, thereby bypassing the electrostatic discharge stress.

REFERENCES:
patent: 5012317 (1991-04-01), Rountre

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